irfr/u120n hexfet ? power mosfet s d g v dss = 100v r ds(on) = 0.21 w i d = 9.4a description 5/11/98 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 9.4 i d @ t c = 100c continuous drain current, v gs @ 10v 6.6 a i dm pulsed drain current ?? 38 p d @t c = 25c power dissipation 48 w linear derating factor 0.32 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 91 mj i ar avalanche current ?? 5.7 a e ar repetitive avalanche energy ?? 4.8 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 3.1 r q ja junction-to-ambient (pcb mount) ** CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance d-p ak to-252aa i-pa k to-251aa l surface mount (irfr120n) l straight lead (IRFU120N) l advanced process technology l fast switching l fully avalanche rated fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. pd - 91365b www.kersemi.com 1
irfr/u120n 2 www.kersemi.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.12 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.21 v gs = 10v, i d = 5.6a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 2.7 CCC CCC s v ds = 25v, i d = 5.7a ? CCC CCC 25 a v ds = 100v, v gs = 0v CCC CCC 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 25 i d = 5.7a q gs gate-to-source charge CCC CCC 4.8 nc v ds = 80v q gd gate-to-drain ("miller") charge CCC CCC 11 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 4.5 CCC v dd = 50v t r rise time CCC 23 CCC ns i d = 5.7a t d(off) turn-off delay time CCC 32 CCC r g = 22 w t f fall time CCC 23 CCC r d = 8.6 w, see fig. 10 ?? between lead, 6mm (0.25in.) from package and center of die contact ? c iss input capacitance CCC 330 CCC v gs = 0v c oss output capacitance CCC 92 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 54 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) nh i gss s d g l s internal source inductance CCC 7.5 CCC r ds(on) static drain-to-source on-resistance l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 5.5a, v gs = 0v ? t rr reverse recovery time CCC 99 150 ns t j = 25c, i f = 5.7a q rr reverse recoverycharge CCC 390 580 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics a 9.4 38 notes: ? v dd = 25v, starting t j = 25c, l = 4.7mh r g = 25 w , i as = 5.7a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 5.7a, di/dt 240a/s, v dd v (br)dss , t j 175c ? uses irf520n data and test conditions ? this is applied for i-pak, ls of d-pak is measured between lead and center of die contact ? pulse width 300s; duty cycle 2%
irfr/u120n www.kersemi.com 3 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics d 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 25c c a 4.5v 1 10 100 0.1 1 10 100 4.5v i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse w idth t = 175c c a 1 10 100 45678910 t = 25c j gs v , gate-to-source volta g e (v) d i , drain-to-source current (a) v = 50v 20s pulse w idth ds t = 175c j a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (n orm alized) v = 10v gs a i = 9.5a d
irfr/u120n 4 www.kersemi.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 100 200 300 400 500 600 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 q , total g ate char g e ( nc ) g v , g ate-to-source voltage (v) gs v = 80v v = 50v v = 20v ds ds ds a for test circuit s ee figure 13 i = 5.7 a d 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 0.1 1 10 100 1 10 100 1000 v , drain-to-source volta g e ( v ) ds i , drain current (a) o p e r a tio n in th is a re a lim ite d by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c sin g le p u ls e c j
irfr/u120n www.kersemi.com 5 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 5.0v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d
irfr/u120n 6 www.kersemi.com q g q gs q gd v g charge 5.0 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 10v 0 40 80 120 160 200 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a startin g t , junction temperature ( c ) v = 25v i to p 2.3a 4.0a bottom 5.7a dd d
irfr/u120n www.kersemi.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irfr/u120n 8 www.kersemi.com package outline to-252aa outline dimensions are shown in millimeters (inches) to-252aa (d-park) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.2 5 (.0 10 ) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e to -25 2a a . 4 dimensions show n are before solder dip, s o l d e r d ip m a x. +0 .16 (.00 6). international re ctifie r lo go assembly lot code exa m ple : this is an ir fr120 w ith as sem bly lot cod e 9u1p first portion of part number second portion of part number 120 ir fr 9u 1p a
irfr/u120n www.kersemi.com 9 package outline to-251aa outline dimensions are shown in millimeters (inches) to-251aa (i-park) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0 .25 (.01 0) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s to j e d e c o u t lin e t o -25 2a a . 4 dimensions show n are before solder dip, s o l d e r d ip m a x. +0.1 6 (.00 6). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) inte rnational rectifier lo go as sem bly lot code first portion of part numbe r second portion of part number 120 9u 1p exam ple : this is an irfu120 w ith assem bly lot code 9u1p irfu
irfr/u120n 10 www.kersemi.com tape & reel information to-252aa tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. o u tline co nfo rm s to e ia -481. 16 mm 13 inc h
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